Stephen Carr - Harvard University Recent electronic models for moiré superlattices have provided accurate band structures to help guide experimental efforts. Unfortunately, calculating these band structures in generic materials is challenging without the simplifications provided by Dirac cones and band edges. By focusing on the configuration-dependent local density of states, the twist-induced electronic structure can be predicted for a material's entire electronic spectrum. This perspective can provide a complete classification of single-particle twistronic phenomena. It also gives insight into the microscopic requirements for moiré flat bands, and allows for easy generalizations to multilayer systems and atomic relaxations. The approach will first be introduced through a 1D bilayer model, and then applied to realistic bilayers of graphene and MoS2.